? 2006 ixys all rights reserved ds99184e(12/05) ixfr 48n60p v dss = 600 v i d25 = 32 a r ds(on) 150 m ? ? ? ? ? t rr 200 ns symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 600 v v gs(th) v ds = v gs , i d = 8 ma 3.0 5.0 v i gss v gs = 30 v dc , v ds = 0 200 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 1000 a r ds(on) v gs = 10 v, i d = i t 150 m ? symbol test conditions maximum ratings v dss t j = 25 c to 150 c 600 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 600 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c32a i dm t c = 25 c, pulse width limited by t jm 110 a i ar t c = 25 c32a e ar t c = 25 c70mj e as t c = 25 c 2.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 20 v/ns t j 150 c, r g = 4 ? p d t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c v isol 50/60 hz, rms, 1 minute 2500 v~ f c mounting force 20..120 / 4.5..26 n/lb. weight 5g g = gate d = drain s = source isolated tab g d s isoplus247 (ixfr) e153432 features l international standard isolated package l ul recognized package l silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation l unclamped inductive switching (uis) rated l low package inductance - easy to drive and to protect l fast intrinsic diode advantages l easy to mount l space savings l high power density n-channel enhancement mode avalanche rated fast intrinsic diode polarhv tm hiperfet power mosfet isoplus247 tm (electrically isolated back surface)
ixys reserves the right to change limits, test conditions, and dimensions. IXFR48N60P symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = i t , notes 1, 2 35 53 s c iss 8860 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 850 pf c rss 60 pf t d(on) 30 ns t r v ds = 0.5 v dss , i d = i t , v gs = 10 v 25 ns t d(off) r g = 2 ? (external) 85 ns t f 22 ns q g(on) 150 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = i t 50 nc q gd 50 nc r thjc 0.42 c/w r thcs 0.15 c/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 32 a i sm repetitive 110 a v sd i f = i s , v gs = 0 v, note 1 1.5 v t rr i f = 20a, -di/dt = 100 a/ s 200 ns q rm v r = 480v 0.8 c i rm 6.0 a isoplus247 outline notes: 1. pulse test, t 300 s, duty cycle d 2 %; 2. test current i t = 24 a. ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2
? 2006 ixys all rights reserved ixfr 48n60p fig. 2. exte nde d output characte ris tics @ 25 o c 0 20 40 60 80 100 120 0 4 8 12 16 2 0 2 4 v d s - volts i d - amperes v gs = 10v 8v 7v 6v 5v fig. 3. output characteristics @ 125 o c 0 5 10 15 20 25 30 35 40 45 50 02468101214 v d s - volts i d - amperes v gs = 10v 7v 5v 6v fig. 1. output characteristics @ 25 o c 0 5 10 15 20 25 30 35 40 45 50 012 3456 v d s - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 4. r ds(on ) norm alize d to i d = 24a value vs. junction tem perature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalized i d = 48a i d = 24a v gs = 10v fig. 5. r ds(on) norm alize d to i d = 24a value vs. drain current 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 3.4 0 20406080100120140 i d - amperes r d s ( o n ) - normalized t j = 125oc t j = 25oc v gs = 10v fig. 6. drain current vs. case tem perature 0 5 10 15 20 25 30 35 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXFR48N60P fig. 11. capacitance 10 100 1000 10000 100000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 q g - nanocoulombs v g s - volts v ds = 300v i d = 24a i g = 10ma fig. 7. input adm ittance 0 10 20 30 40 50 60 70 80 4 4.5 5 5.5 6 6.5 7 v g s - volts i d - amperes t j = 125oc 25oc -40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 100 0 102030405060708090 i d - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 9. source curre nt vs . source-to-drain voltage 0 20 40 60 80 100 120 140 160 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 v s d - volts i s - amperes t j = 125oc t j = 25oc fig. 13. maxim um transient therm al resistance 0.00 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds r ( t h ) j c - o c / w
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